Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-21
2010-02-09
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S108000, C257S295000, C257S414000, C257S422000, C257S423000, C257S424000, C257S425000, C257S426000, C257S427000, C257SE27005, C257SE27006, C257SE27008, C257SE29164, C257SE29167, C257SE29272, C257SE29323, C360S122000, C369S126000
Reexamination Certificate
active
07659562
ABSTRACT:
An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.
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Hong Seung-bum
Jung Ju-hwan
Kim Yong-su
Ko Hyoung-soo
Park Hong-sik
Samsung Electronics Co,. Ltd.
Soward Ida M
Sughrue & Mion, PLLC
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