Methods of reducing alpha particle inflicted damage to SRAM cell

Details Methods of reducing alpha particle inflicted damage to SRAM cell Methods of reducing alpha particle inflicted damage to SRAM cell

1997-08-22

1999-03-02

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, 438152, 438153, 438953, 257903, 257904, H01L 218234

Patent

active

058770518

ABSTRACT:
The present invention pertains to methods of forming integrated circuitry, methods of forming SRAM cells, and methods of reducing alpha particle inflicted damage to SRAM cells. Additionally, the present invention pertains to integrated circuitry. In one aspect, the invention includes a method which includes: a) forming at least one second conductivity type diffusion region beneath at least one of an SRAM cell pull-down device drain of a first conductivity type and an SRAM cell access device source of the first conductivity type; and b) not forming a second conductivity type diffusion region beneath at least one of a source of the SRAM cell pull-down device and a drain of the SRAM cell access device. In another aspect, the invention includes a method which includes a) providing a semiconductor substrate; b) defining an SRAM cell pull-down device region of the semiconductor substrate, the pull-down device region having a pull-down device source region and a pull-down device drain region; c) defining an SRAM access device source region and an access device drain region; d) defining a field oxide isolation region of the semiconductor substrate; and e) in a common implant, implanting a conductivity-enhancing dopant of a first conductivity type beneath the field oxide region, beneath the access device source region, and beneath the pull-down device drain region; the common implant not implanting the conductivity-enhancing dopant of the first conductivity type beneath at least one of the access device drain region and the pull-down device source region.

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