Methods of forming and operating NAND memory with...

Details Methods of forming and operating NAND memory with... Methods of forming and operating NAND memory with...

2007-03-30

2010-06-29

Tran, Thien F (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000, C438S264000, C438S266000

Reexamination Certificate

active

07745285

ABSTRACT:
A string of nonvolatile memory cells are formed with control gates extending between floating gates, control gates and floating gates separated by tunnel dielectric layers. Electron tunneling between control gates and floating gates is used for programming. A process for forming a memory array forms odd numbered floating gates from a first layer and even numbered floating gates from a second layer.

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