Method of forming top electrode for capacitor and...

Details Method of forming top electrode for capacitor and... Method of forming top electrode for capacitor and...

2007-03-21

2010-06-01

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C257SE21590, C257SE23145

Reexamination Certificate

active

07727879

ABSTRACT:
A method of manufacturing a semiconductor device includes providing a substrate having a first conductive layer disposed on a top surface of the substrate. A high resistivity layer is formed over the substrate and the first conductive layer. A dielectric layer is deposited over the substrate, first conductive layer and high resistivity layer. A portion of the dielectric layer, high resistivity layer, and first conductive layer forms a capacitor stack. A first passivation layer is formed over the dielectric layer. A second conductive layer is formed over the capacitor stack and a portion of the first passivation layer. A first opening is etched in the dielectric layer to expose a surface of the high resistivity layer. A third and fourth conductive layer is deposited over the first opening in the dielectric layer and a portion of the first passivation layer.

REFERENCES:
patent: 5370766 (1994-12-01), Desaigoudar et al.
patent: 5446311 (1995-08-01), Ewen et al.
patent: 5478773 (1995-12-01), Dow et al.
patent: 6075427 (2000-06-01), Tai et al.
patent: 2003/0109128 (2003-06-01), Koganei
patent: 2003/0148558 (2003-08-01), Kubo et al.

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