Semiconductor device having storage node electrode with...

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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C438S397000, C257SE21648

Reexamination Certificate

active

07807542

ABSTRACT:
A highly reliable semiconductor device and a method fabricating the same are provided, the semiconductor device having a low resistance electrode structure. The semiconductor device includes an interlayer insulation film formed on a semiconductor substrate. A storage node electrode is formed on the interlayer insulation film. A protection film is formed on the storage node electrode and includes a nitrided metal film. A dielectric film overlies the protection film. A plate electrode is formed on the dielectric film.

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patent: 6670256 (2003-12-01), Yang et al.
patent: 6855597 (2005-02-01), Shin et al.
patent: 6881642 (2005-04-01), Basceri et al.
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patent: 2004/0110341 (2004-06-01), Park et al.
patent: 2006/0024883 (2006-02-01), Hwang
patent: 2005-064175 (2005-03-01), None
patent: 2004-0000602 (2004-01-01), None
patent: 2005-0062919 (2005-06-01), None
patent: 2005-0067564 (2005-07-01), None
English language abstract for Korean Publication No. 2004-0000602.
English language abstract for Korean Publication No. 2005-0062919.
English language abstract for Korean Publication No. 2005-0067564.
English language abstract for Japanese Publication No. 2005-064175.

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