Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2006-11-21
2010-10-05
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S397000, C257SE21648
Reexamination Certificate
active
07807542
ABSTRACT:
A highly reliable semiconductor device and a method fabricating the same are provided, the semiconductor device having a low resistance electrode structure. The semiconductor device includes an interlayer insulation film formed on a semiconductor substrate. A storage node electrode is formed on the interlayer insulation film. A protection film is formed on the storage node electrode and includes a nitrided metal film. A dielectric film overlies the protection film. A plate electrode is formed on the dielectric film.
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English language abstract for Japanese Publication No. 2005-064175.
Kim Hye-Sun
Kim Jin-Sung
Lee Kyung-Woo
Lee Yeong-Cheol
Park Sang-Jun
Kebede Brook
Muir Patent Consulting, PLLC
Samsung Electronics Co,. Ltd.
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