Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-03-14
2010-06-15
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S239000, C438S253000, C438S254000, C438S381000, C438S398000, C257SE21214
Reexamination Certificate
active
07736972
ABSTRACT:
In order to form a storage electrode of a semiconductor memory device, an interlayer dielectric layer is formed on a semiconductor substrate having a bit line thereon. A contact hole exposing the semiconductor substrate is formed by patterning the interlayer dielectric layer. A polysilicon layer is etched to a predetermined thickness using polysilicon etching gas after the polysilicon layer is deposited. An over-etch process is performed relative to the polysilicon layer, and then a storage node contact having a planarized surface is formed in the contact hole by performing an etching process for planarizing the surface of the polysilicon layer. A mold insulating layer is formed on the resultant structure, in which the mold insulating layer exposes an area where the storage node contact is formed. A storage electrode coupled to the storage node contact is formed.
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Fourson George
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Parker John M
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