Spacer patterned augmentation of tri-gate transistor gate...

Details Spacer patterned augmentation of tri-gate transistor gate... Spacer patterned augmentation of tri-gate transistor gate...

2007-12-28

2010-10-26

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000, C438S696000, C257SE27098, C257SE21661

Reexamination Certificate

active

07820512

ABSTRACT:
In general, in one aspect, a method includes forming a semiconductor substrate having N-diffusion and P-diffusion regions. A gate stack is formed over the semiconductor substrate. A gate electrode hard mask is formed over the gate stack. The gate electrode hard mask is augmented around pass gate transistors with a spacer material. The gate stack is etched using the augmented gate electrode hard mask to form the gate electrodes. The gate electrodes around the pass gate have a greater length than other gate electrodes.

REFERENCES:
patent: 5464784 (1995-11-01), Crisenza et al.
patent: 5719509 (1998-02-01), Chan
patent: 6096611 (2000-08-01), Wu
patent: 6218241 (2001-04-01), Chuang
patent: 6458646 (2002-10-01), Divakaruni et al.
patent: 2004/0195608 (2004-10-01), Kim et al.
patent: 2005/0062161 (2005-03-01), Chen et al.
patent: 2005/0121676 (2005-06-01), Fried et al.
patent: 2007/0093054 (2007-04-01), Min et al.
patent: 2008/0128796 (2008-06-01), Zhu et al.
patent: 2008/0191282 (2008-08-01), Bauer et al.

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