Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-09-28
2010-11-16
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S199000
Reexamination Certificate
active
07833848
ABSTRACT:
A method for removing hard masks on gates in a semiconductor manufacturing process is conducted as follows. First of all, a first gate and a second gate with hard masks are formed on a semiconductor substrate, wherein the second gate is larger than the first gate. The first gate and second gate could be associated with silicon-germanium (SiGe) source and drain regions to form p-type transistors. Next, a photoresist layer is deposited, and an opening of the photoresist layer is formed on the hard mask of the second gate. Then, the photoresist layer on the first and second gates is removed completely by etching back. Because there is no photoresist residue, the hard masks on the first and second gates can be removed completely afterwards.
REFERENCES:
patent: 2006/0102962 (2006-05-01), Saito et al.
patent: 2007/0057331 (2007-03-01), Satou et al.
patent: 2007/0231983 (2007-10-01), Shifren et al.
patent: 1893028 (2007-01-01), None
Office Action dated Oct. 9, 2009 for 2008102119433 which is a corresponding Chinese application that cites CN1893028A, and US 20060102962.
Chen Chih Chieh
Chuang Harry
Chung Sheng Chen
Thei Kong Beng
Tsai Hung Chih
Brown Valerie
King Anthony
Nguyen Ha Tran T
Taiwan Semiconductor Manufacturing Co. Ltd.
WPAT, P.C.
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