Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2005-09-26

2010-02-16

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C257SE21347, C257SE21475, C257SE21596

Reexamination Certificate

active

07662685

ABSTRACT:
A semiconductor device includes a Si substrate, a gate insulating film formed on the Si substrate, the gate insulating film being formed of an oxide film containing at least one selected from the group of Zr, Hf, Ti and a lanthanoid series metal, and having a single local minimal value on a high binding energy side of an inflection point in first differentiation of an O1s photoelectron spectrum, and a gate electrode formed on the gate insulating film.

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Ai-Dong Li et al., “Characteristics of LaAlO3Gate Dielectrics on Si Grown by Metalorganic Chemical Vapor Deposition”, Applied Physics Letters, Oct. 27, 2003, pp. 3540-3542, vol. 83, No. 17, American Institute of Physics.
X. B. Lu et al., “Interfacial Structures of LaAlO3Films on Si(100) Substrates”, Applied Physics A, vol. 78, Apr. 11, 2003, pp. 921-923.
Masahiro Koike et al., “Effect of Hf-N bond on Properties of Thermally Stable Amorphous HfSiON and Applicability of this Material to Sub-50nm Technology Node LSIs”, IEEE, 2003, pp. 4.7.1 to 4.7.4.
Notification of Reasons for Rejection mailed by the Japanese Patent Office on Dec. 18, 2007, for Japanese Patent Application No. 2004-307027, and an English-language translation thereof.

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