Method of manufacturing semiconductor device having...

Details Method of manufacturing semiconductor device having... Method of manufacturing semiconductor device having...

2007-07-06

2010-10-19

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S294000, C438S400000, C257SE21384

Reexamination Certificate

active

07816208

ABSTRACT:
A method of manufacturing a semiconductor device includes: a first step of forming an STI region and an active region surrounded by the STI region on a semiconductor substrate; a second step of forming a protection film protecting a shoulder part of the STI region in a boundary between the active region and the STI region; a third step of forming a gate trench in the active region so as to leave a part of the semiconductor substrate located between a side surface of the STI region and a side surface of the gate trench;a fourth step of forming a gate insulating film on the side surface of the gate trench; a fifth step of forming a gate electrode, at least a part of the gate electrode being buried in the gate trench; and a sixth step of forming a source region and a drain region in regions located on both sides of the gate trench in an extension direction of the gate trench, respectively, so that the part of the semiconductor substrate functions as a channel region.

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