Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-07
2010-12-21
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21206, C257SE21209, C438S267000
Reexamination Certificate
active
07855410
ABSTRACT:
According to one embodiment, a semiconductor memory device can be generally characterized as including a gate insulating layer on a semiconductor substrate, a floating gate on the gate insulating layer and a word line disposed on one side of the floating gate. A first side of the floating gate facing the word line may include a projecting portion projecting toward the word line. A tip of the projecting portion may include a corner that extends substantially perpendicularly with respect to a top surface of the semiconductor substrate.
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Choi Yong-Suk
Han Jeong-Uk
Kwon Bae-Seong
Kwon Hyok-Ki
Yang Seung-Jin
Fahmy Wael M
Ingham John C
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
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