Semiconductor memory devices having a floating gate with a...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE21206, C257SE21209, C438S267000

Reexamination Certificate

active

07855410

ABSTRACT:
According to one embodiment, a semiconductor memory device can be generally characterized as including a gate insulating layer on a semiconductor substrate, a floating gate on the gate insulating layer and a word line disposed on one side of the floating gate. A first side of the floating gate facing the word line may include a projecting portion projecting toward the word line. A tip of the projecting portion may include a corner that extends substantially perpendicularly with respect to a top surface of the semiconductor substrate.

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