Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-12-28
2010-02-09
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S189110
Reexamination Certificate
active
07660176
ABSTRACT:
A semiconductor memory device includes a write driver, a first precharging unit, and a second precharging unit. The write driver loads data applied to a first data line onto a second data line. The first precharging unit precharges the second data line to a precharging voltage in response to a precharging signal. The second precharging unit overdrives the second data line to a voltage higher than the precharging voltage in response to an overdriving signal enabled for a predetermined time period during an initial precharging interval of the second data line.
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Foreign office action issued on Oct. 31, 2008 KR Application No. 10-2007-0032534.
Hynix / Semiconductor Inc.
IP & T Law Firm PLC
Nguyen Tan T.
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