Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-04-14
2010-10-12
Pham, Hoai v (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S423000, C438S526000, C257SE21563, C257SE21564
Reexamination Certificate
active
07811878
ABSTRACT:
To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface. After partially forming a mask oxide film23on the surface of a substrate12constituted of single crystal silicon, oxygen ions16are implanted into the surface of the substrate through the mask oxide film, and the substrate is annealed to form an buried oxide film13inside the substrate. Further included is a step of forming a predetermined-depth concave portion12cdeeper than substrate surface12bserving as a bulk area on which the mask oxide film is formed on the substrate surface12aserving as an SOI area by forming a thermally grown oxide film21on the substrate surface12aserving as an SOI area on which the mask oxide film is not formed between the step of forming the mask oxide film and the step of implanting oxygen ions.
REFERENCES:
patent: 6756257 (2004-06-01), Davari et al.
patent: 7115463 (2006-10-01), Sadana et al.
patent: 05-082525 (1993-04-01), None
patent: 2001-308025 (2001-11-01), None
patent: 2006-120715 (2006-05-01), None
Hamamoto Takeshi
Ko Bong-Gyun
Nakai Tetsuya
Yamada Takashi
Hogan & Lovells US LLP
Kabushiki Kaisha Toshiba
Pham Hoai v
Sumco Corporation
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