Semiconductor device and process for production thereof

Details Semiconductor device and process for production thereof Semiconductor device and process for production thereof

2008-08-19

2010-06-01

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S030000, C438S149000, C438S239000, C257S296000, C257S300000, C257SE21649

Reexamination Certificate

active

07727836

ABSTRACT:
Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.

REFERENCES:
patent: 4409724 (1983-10-01), Tasch, Jr. et al.
patent: 4823180 (1989-04-01), Wieder et al.
patent: 4851370 (1989-07-01), Doklan et al.
patent: 4886962 (1989-12-01), Gofuku et al.
patent: 5162933 (1992-11-01), Kakuda et al.
patent: 5292675 (1994-03-01), Codama
patent: 5343066 (1994-08-01), Okamoto et al.
patent: 5365079 (1994-11-01), Kodaira et al.
patent: 5435608 (1995-07-01), Wei et al.
patent: 5508209 (1996-04-01), Zhang et al.
patent: 5563427 (1996-10-01), Yudasaka et al.
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5608251 (1997-03-01), Konuma et al.
patent: 5616935 (1997-04-01), Koyama et al.
patent: 5620905 (1997-04-01), Konuma et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5671027 (1997-09-01), Sasano et al.
patent: 5712495 (1998-01-01), Suzawa
patent: 5719065 (1998-02-01), Takemura et al.
patent: 5737049 (1998-04-01), Shin et al.
patent: 5814529 (1998-09-01), Zhang
patent: 5835177 (1998-11-01), Dohjo et al.
patent: 5844255 (1998-12-01), Suzuki et al.
patent: 5847432 (1998-12-01), Nozaki
patent: 5859683 (1999-01-01), Tagusa et al.
patent: 5882960 (1999-03-01), Zhang et al.
patent: 5895933 (1999-04-01), Zhang et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5966193 (1999-10-01), Zhang et al.
patent: 6066860 (2000-05-01), Katayama et al.
patent: 6077731 (2000-06-01), Yamazaki et al.
patent: 6147667 (2000-11-01), Yamazaki et al.
patent: 6166397 (2000-12-01), Yamazaki et al.
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6278131 (2001-08-01), Yamazaki et al.
patent: 6316787 (2001-11-01), Ohtani
patent: 6320224 (2001-11-01), Zhang
patent: 6330044 (2001-12-01), Murade
patent: 6490014 (2002-12-01), Ohtani
patent: 6639244 (2003-10-01), Yamazaki et al.
patent: 6639265 (2003-10-01), Arao et al.
patent: 6906347 (2005-06-01), Yamazaki et al.
patent: 2001/0019384 (2001-09-01), Murade
patent: 2001/0029070 (2001-10-01), Yamazaki et al.
patent: 2001/0030722 (2001-10-01), Murade
patent: 2002/0024048 (2002-02-01), Ohtani
patent: 2002/0055206 (2002-05-01), Zhang
patent: 2003/0168688 (2003-09-01), Ohtani et al.
patent: 2004/0046174 (2004-03-01), Ohtani
patent: 0 544 229 (1993-06-01), None
patent: 0 862 077 (1998-09-01), None
patent: 3-280018 (1991-12-01), None
patent: 4-219736 (1992-08-01), None
patent: 5-34718 (1993-02-01), None
patent: 7-130652 (1995-05-01), None
patent: 7-130974 (1995-05-01), None
patent: 7-135323 (1995-05-01), None
patent: 7-169974 (1995-07-01), None
patent: 7-169975 (1995-07-01), None
patent: 7-209672 (1995-08-01), None
patent: 7-218932 (1995-08-01), None
patent: 7-321339 (1995-12-01), None
patent: 8-78329 (1996-03-01), None
patent: 9-312260 (1997-12-01), None
patent: 10-31235 (1998-02-01), None
patent: 10-56184 (1998-02-01), None
patent: 10-247735 (1998-09-01), None
patent: 10-274789 (1998-10-01), None
patent: 10-294280 (1998-11-01), None
patent: 11-191628 (1999-07-01), None
patent: 2000-183356 (2000-06-01), None
patent: 2000-194014 (2000-07-01), None
patent: 2000-196093 (2000-07-01), None
Preliminary Amendment A, filed Jul. 5, 2001 in U.S. Appl. No. 09/874,670 (now US 2001/0029070 Al and 6,906,347 B2).
European Search Report re application No. EP 00101189.9, dated May 28, 2004.
Shimokawa, R. et al, “Characterization of High-Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement,” Japanese Journal of Applied Physics, vol. 27, No. 5, May 1988, pp. 751-758.
Inui, S. et al, “Thresholdless Antiferroelectricity in Liquid Crystals and its Application to Displays,” J. Mater. Chem., vol. 6, No. 4, 1996, pp. 671-673.
Yoshida, T. et al, “33.2: A Full-Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle with Fast Response Time,” SID 97 Digest, 1997, pp. 841-844.
Ohtani, H. et al, “LP-B: Late-News Poster: A 60-In. HDTV Rear-Projector with Continuous-Grain-Silicon Technology,” SID 98 Digest, 1998, pp. 467-470.
Furue, H. et al, “P-78: Characteristics and Driving Scheme of Polymer-Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability,” SID 98 Digest, 1998, pp. 782-785.
Terada, M. et al, “Half-V Switching Mode FLCD,” Proceedings of the 46thApplied Physics Association Lectures, abstract 28p-V-8, Mar. 1999, p. 1316.
Yoshihara, T., “Time Division Full Color LCD by Ferroelectric Liquid Crystal,” Ekisho, vol. 3, No. 3, 1999, pp. 190-194.

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