Method of forming N-and P- channel field effect transistors...

Details Method of forming N-and P- channel field effect transistors... Method of forming N-and P- channel field effect transistors...

2008-02-15

2010-12-14

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S229000, C438S300000, C438S592000, C438S652000, C127S070000

Reexamination Certificate

active

07851289

ABSTRACT:
A method for forming a Field Effect Transistor (FET) within a strain effect semiconductor layer is disclosed, whereby the source and drain of the FET are formed only in the strain effect silicon layer. The FET may be formed as a gate electrode of a p-channel type field effect transistor, and a gate electrode of a n-channel type field effect transistor on the silicon layer which has the strain effect through a gate insulating film. The sources and drains of p- and n-type diffusion layers are then formed in the silicon layer having the strain effect, on both sides of the gate electrode.

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