Implantation of multiple species to address copper reliability

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region

Reexamination Certificate

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C438S643000, C438S687000, C257SE21584

Reexamination Certificate

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07737013

ABSTRACT:
A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.

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