Method of forming front contacts to a silicon solar cell...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S665000, C438S678000, C136S261000, C205S135000, C205S107000

Reexamination Certificate

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07820472

ABSTRACT:
A method for forming front contacts on a silicon solar cell which includes texture etching the front surface of the solar cell, forming an antireflective layer over the face, diffusing a doping material into the face to form a heavily doped region in valleys formed during the texture-etching of the face, depositing an electrically conductive material on the heavily doped regions in the valleys and annealing the solar cell.

REFERENCES:
patent: 3291871 (1966-12-01), Francis
patent: 5591565 (1997-01-01), Holdermann et al.
patent: 6162658 (2000-12-01), Green et al.
patent: 05-218466 (1993-08-01), None
patent: 05-243592 (1993-09-01), None
patent: 10-1998-0068248 (1998-10-01), None
International Search Report. PCT/US2009/064121 dtd. Jun. 21, 2010.

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