Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-04-26

2010-02-02

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S229000, C438S299000, C257S369000, C257S382000, C257S407000

Reexamination Certificate

active

07655516

ABSTRACT:
In an nMOSFET, a gate electrode is formed by a silicide layer comprised of NiSi. In a surface layer of a Ge substrate on both sides of the gate electrode, NiGe layers which are germanide layers comprised of NiGe are formed. On junction interfaces between the NiGe layers and the Ge substrate, first layers are formed which are formed by segregating a predetermined atom with high concentration, and on an interface between the gate electrode and an insulation film, a second layer is formed which is formed by segregating the same atom as that of the first layer with high concentration.

REFERENCES:
patent: 6621131 (2003-09-01), Murthy et al.
patent: 6703291 (2004-03-01), Boyanov et al.
patent: 2007/0215956 (2007-09-01), Tsuchiya et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4193105