Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-12-28

2010-06-15

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C438S397000, C257S306000

Reexamination Certificate

active

07736971

ABSTRACT:
A method of fabricating a semiconductor device includes forming a first interlayer insulating film including a storage node contact plug over a semiconductor substrate. A second interlayer insulating film is formed over the first interlayer insulating film and the storage node contact plug. A mask pattern is formed over the second interlayer insulating film to expose a storage node region. The second interlayer insulating film and the first interlayer insulating film is selectively etched to form a recess exposing a portion of the storage node contact plug. A lower storage node is formed in the recess. The storage node includes a concave structure that surrounds the exposed storage node contact plug. A dip-out process is performed to remove the second interlayer insulating film. A dielectric film is formed over the semiconductor substrate including the lower storage node. A plate electrode is deposited over the dielectric film to form a capacitor.

REFERENCES:
patent: 7235452 (2007-06-01), Kang et al.
patent: 2003/0129806 (2003-07-01), Miki et al.
patent: 2005/0130371 (2005-06-01), Cho et al.
patent: 1020050068336 (2005-07-01), None
patent: 1020060061107 (2006-06-01), None
patent: 1020060068970 (2006-06-01), None
patent: 1020070081713 (2007-08-01), None

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