Spin polarization amplifying transistor

Details Spin polarization amplifying transistor Spin polarization amplifying transistor

2006-03-22

2010-02-02

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S289000, C438S513000, C438S590000, C438S593000, C257S295000, C257S421000, C257S424000, C257SE29164, C365S200000, C365S173000, C365S170000, C365S158000, C428S200000, C428S836100

Reexamination Certificate

active

07655517

ABSTRACT:
An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current to generate spontaneous magnetization of a larger output current.

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