Method of forming metal-insulator-metal structure

Semiconductor device manufacturing: process – Making passive device – Trench capacitor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S243000, C257S301000, C257SE29346

Reexamination Certificate

active

07851324

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a metal-insulator-metal (MIM) device having a metal organic chemical vapor deposited (MOCVD) lower electrode and an atomic layer deposited (ALD) upper electrode.

REFERENCES:
patent: 5963835 (1999-10-01), Sandhu et al.
patent: 6734053 (2004-05-01), Liu et al.
patent: 6753618 (2004-06-01), Basceri et al.
patent: 7101806 (2006-09-01), Cline et al.
patent: 2005/0023640 (2005-02-01), Choi et al.
patent: 2006/0128108 (2006-06-01), Kim et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming metal-insulator-metal structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming metal-insulator-metal structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming metal-insulator-metal structure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4189526

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.