Dielectric material with reduced dielectric constant and...

Details Dielectric material with reduced dielectric constant and... Dielectric material with reduced dielectric constant and...

2006-02-23

2010-06-08

Nguyen, Kimberly D (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S421000, C257SE23013, C257SE21573

Reexamination Certificate

active

07732322

ABSTRACT:
In a first aspect, a first method of manufacturing a dielectric material with a reduced dielectric constant is provided. The first method includes the steps of (1) forming a dielectric material layer including a trench on a substrate; and (2) forming a cladding region in the dielectric material layer by forming a plurality of air gaps in the dielectric material layer along at least one of a sidewall and a bottom of the trench so as to reduce an effective dielectric constant of the dielectric material. Numerous other aspects are provided.

REFERENCES:
patent: 6090698 (2000-07-01), Lee
patent: 6204192 (2001-03-01), Zhao et al.
patent: 6610593 (2003-08-01), Kohl et al.
patent: 6835631 (2004-12-01), Zhen et al.
patent: 6861332 (2005-03-01), Park et al.
patent: 6903002 (2005-06-01), Ben-Tzur et al.
patent: 2003/0109122 (2003-06-01), Gross
patent: 2004/0115910 (2004-06-01), Passemard et al.
patent: 2006/0030128 (2006-02-01), Bu et al.
patent: 2007/0173073 (2007-07-01), Weber
patent: WO 02058134 (2002-07-01), None

Affiliated with

Also associated with

Rating

Dielectric material with reduced dielectric constant and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dielectric material with reduced dielectric constant and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric material with reduced dielectric constant and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4188036