Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-31
2010-12-14
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S315000
Reexamination Certificate
active
07851295
ABSTRACT:
A flash memory device and a method of manufacturing a flash memory device are provided. The flash memory device includes a gate region on a semiconductor substrate, spacers on sidewalls of the gate region, and a passivation layer between the semiconductor substrate and a portion of each spacer.
REFERENCES:
patent: 2006/0163678 (2006-07-01), Anezaki
patent: 10-1996-0017473 (1999-02-01), None
Dongbu Hitech Co., Ltd.
Lee Calvin
Saliwanchik Lloyd & Saliwanchik
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