Flash memory device and method of manufacturing the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257S315000

Reexamination Certificate

active

07851295

ABSTRACT:
A flash memory device and a method of manufacturing a flash memory device are provided. The flash memory device includes a gate region on a semiconductor substrate, spacers on sidewalls of the gate region, and a passivation layer between the semiconductor substrate and a portion of each spacer.

REFERENCES:
patent: 2006/0163678 (2006-07-01), Anezaki
patent: 10-1996-0017473 (1999-02-01), None

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