Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-31
2010-02-09
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S301000, C438S305000, C257SE21415, C257SE21564
Reexamination Certificate
active
07659174
ABSTRACT:
A structure and method of fabrication of a semiconductor device having a stress relief layer under a stress layer in one region of a substrate. In a first example, a stress relief layer is formed over a first region of the substrate (e.g., PFET region) and not over a second region (e.g., NFET region). A stress layer is over the stress relief layer in the first region and over the devices and substrate/silicide in the second region. The NFET transistor performance is enhanced due to the overall tensile stress in the NFET channel while the degradation in the PFET transistor performance is reduced/eliminated due to the inclusion of the stress relief layer. In a second example embodiment, the stress relief layer is formed over the second region, but not the first region and the stress of the stress layer is reversed.
REFERENCES:
patent: 6573172 (2003-06-01), En et al.
patent: 2005/0093030 (2005-05-01), Doris et al.
patent: 2005/0093059 (2005-05-01), Belyansky et al.
patent: 2005/0093078 (2005-05-01), Chan et al.
patent: 2005/0260810 (2005-11-01), Cheng et al.
Chan Victor
Lee Yong Meng
Yang Haining S.
Chartered Semiconductor Manufacturing Ltd.
Horizon IP Pte Ltd
International Business Machines Corporation (IBM)
Lindsay, Jr. Walter L
LandOfFree
Method to enhance device performance with selective stress... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method to enhance device performance with selective stress..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to enhance device performance with selective stress... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4186371