Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-04
2010-02-23
Loke, Steven (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S585000, C438S586000, C438S595000, C438S596000
Reexamination Certificate
active
07666727
ABSTRACT:
A transistor comprising a gate electrode formed on a gate dielectric layer formed on a substrate. A pair of source/drain regions are formed in the substrate on opposite sides of the laterally opposite sidewalls of the gate electrode. The gate electrode has a central portion formed on the gate dielectric layer and over the substrate region between the source and drain regions and a pair sidewall portions which overlap a portion of the source/drain regions wherein the central portion has a first work function and said pair of sidewall portions has a second work function, wherein the second work function is different than the first work function.
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Chau Robert S.
Doczy Mark
Doyle Brian
Hareland Scott A.
Blakely , Sokoloff, Taylor & Zafman LLP
Goodwin David
Intel Corporation
Loke Steven
LandOfFree
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