Semiconductor device having recess channel structure and...

Details Semiconductor device having recess channel structure and... Semiconductor device having recess channel structure and...

2007-10-01

2010-11-16

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C257S330000, C257SE21429

Reexamination Certificate

active

07833861

ABSTRACT:
A semiconductor device having a recess channel structure includes a semiconductor substrate having a recess formed in a gate forming area in an active area; an insulation layer formed in the semiconductor substrate so as to define the active area and formed so as to apply a tensile stress in a channel width direction; a stressor formed in a surface of the insulation layer and formed so as to apply a compressive stress in a channel height direction; a gate formed over the recess in the active area; and source/drain areas formed in a surface of the active area at both side of the gate.

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Goto et al., “High Performance 35 nm Gate CMOSFETs with Vertical Scaling and Total Stress Control for 65 nm Technology,”2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 49-50.

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