Method of forming amorphous source/drain extensions

Details Method of forming amorphous source/drain extensions Method of forming amorphous source/drain extensions

2006-12-21

2010-02-23

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S233000, C438S301000, C438S506000, C257SE21619

Reexamination Certificate

active

07666748

ABSTRACT:
A method for making a transistor within a semiconductor wafer. The method may include etching a recess at source/drain extension locations and depositing amorphous silicon within the recess to from amorphous silicon source/drain extensions. Dopants may be implanted into the amorphous silicon source/drain extensions and the semiconductor wafer may then be annealed.

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