Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-09
2010-06-15
Nadav, Ori (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S131000, C257S156000, C257S329000, C257S340000, C257S376000
Reexamination Certificate
active
07736977
ABSTRACT:
An object of the present invention is to provide a semiconductor device capable of radiating electron-beams only to a desired region without forming a layer for restricting the radiating rays. A source electrode22made of aluminum prevents the generation of bremsstrahlung even when the electron-beams are radiated to the source electrode in a exposed condition. Also, the source electrode having an opening25at above of a crystal defect region11is used as a mask when the electron-beams are radiated thereto. That is the source electrode made of aluminum can be used both as a wiring and a mask for the radiating rays.
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Hamre Schumann Mueller & Larson P.C.
Nadav Ori
Rohm & Co., Ltd.
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