Method for fabricating a semiconductor structure

Details Method for fabricating a semiconductor structure Method for fabricating a semiconductor structure

2009-02-09

2010-06-08

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S149000, C438S300000, C257S347000, C257S377000

Reexamination Certificate

active

07732288

ABSTRACT:
A method for fabricating a semiconductor structure. The novel transistor structure comprises first and second source/drain (S/D) regions whose top surfaces are lower than a top surface of the channel region of the transistor structure. A semiconductor layer and a gate stack on the semiconductor layer are provided. The semiconductor layer includes (i) a channel region directly beneath the gate stack, and (ii) first and second semiconductor regions essentially not covered by the gate stack, and wherein the channel region is disposed between the first and second semiconductor regions. The first and second semiconductor regions are removed. Regions directly beneath the removed first and second semiconductor regions are removed so as to form first and second source/drain regions, respectively, such that top surfaces of the first and second source/drain regions are below a top surface of the channel region.

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