Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-03-08
2010-10-19
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S260000, C438S265000, C438S267000, C438S288000, C257SE21680
Reexamination Certificate
active
07816207
ABSTRACT:
A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.
REFERENCES:
patent: 2005/0260814 (2005-11-01), Cho et al.
patent: 2005/0263816 (2005-12-01), Tseng
patent: 2005/0282337 (2005-12-01), Shyu et al.
patent: 63-257231 (1988-10-01), None
patent: 11-145471 (1999-05-01), None
patent: 2003-100916 (2003-04-01), None
patent: 2003-309193 (2003-10-01), None
patent: 2004-111629 (2004-04-01), None
Choi et al. “Highly Scalable and Reliable 2-bit/cell SONOS Memory Transistor beyond 50nm NVM Technology Using Outer Sidewall Spacer Scheme with Damascene Gate Process”. IEEE 2005 Symposium on VLSI Technology Digest of Technical Papers, 118-119.
Ashida Motoi
Koga Tsuyoshi
Okada Daisuke
Okazaki Tsutomu
Ozaki Hiroji
McDermott Will & Emery LLP
Pham Thanh V
Renesas Technology Corp.
LandOfFree
Semiconductor device having electrode and manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having electrode and manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having electrode and manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4179912