Methods for forming quantum dots and forming gate using the...

Details Methods for forming quantum dots and forming gate using the... Methods for forming quantum dots and forming gate using the...

2008-06-27

2010-11-09

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C438S752000, C438S769000, C257SE21170, C257SE21058, C257SE21259, C257SE21267, C257SE21278, C257SE21293, C257SE21422

Reexamination Certificate

active

07829413

ABSTRACT:
Methods for forming a gate using quantum dots are disclosed. More particularly, the present invention relates to a method for forming quantum dots for fabrication of an ultrafine semiconductor device includes a gate with quantum dots. The present invention is capable of forming quantum dots in uniform sizes and at uniform intervals so as to achieve an electrically stable device.

REFERENCES:
patent: 7195872 (2007-03-01), Agrawal et al.
patent: 2003/0148401 (2003-08-01), Agrawal et al.

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