Method for nitriding substrate and method for forming...

Details Method for nitriding substrate and method for forming... Method for nitriding substrate and method for forming...

2006-03-28

2010-10-26

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257SE21292, C118S7230AN

Reexamination Certificate

active

07820557

ABSTRACT:
In a substrate nitriding method for nitriding a target substrate by allowing a nitrogen-containing plasma to act on silicon on a surface of the substrate in a processing chamber of a plasma processing apparatus, the nitridation by the nitrogen-containing plasma is performed by controlling a sheath voltage Vdcaround the substrate to be less than or equal to about 3.5 eV. The sheath voltage Vdcis a potential difference Vp−Vfbetween a plasma potential Vpin a plasma generating region and a floating potential Vfof the substrate.

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patent: 02 058130 (2002-07-01), None
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patent: WO 2004047157 (2004-06-01), None

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