Semiconductor device, and method for manufacturing the same

Details Semiconductor device, and method for manufacturing the same Semiconductor device, and method for manufacturing the same

2005-11-16

2010-06-15

Toledo, Fernando L (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S458000, C438S759000, C438S800000, C438S982000, C438S099000, C438S151000, C438S114000, C257S492000, C257S004000, C257S529000, C257SE51032, C257SE31001

Reexamination Certificate

active

07736964

ABSTRACT:
It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.

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