Semiconductor device and methods of fabricating the same...

Details Semiconductor device and methods of fabricating the same... Semiconductor device and methods of fabricating the same...

2006-09-22

2010-10-05

Brewster, William M. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S230000, C438S634000, C438S791000

Reexamination Certificate

active

07808043

ABSTRACT:
A semiconductor device having an etch stop layer and a method of fabricating the same are provided. The semiconductor device may include a substrate and a first gate electrode formed on the substrate. An auxiliary spacer may be formed on the sidewall of the first gate electrode. An etch stop layer may be formed on the substrate having the auxiliary spacer. The etch stop layer and the auxiliary spacer may be formed of a material having a same stress property.

REFERENCES:
patent: 5472890 (1995-12-01), Oda
patent: 5989978 (1999-11-01), Peidous
patent: 2003/0011017 (2003-01-01), Lee et al.
patent: 2006/0249794 (2006-11-01), Teh et al.
patent: 2003-060201 (2003-02-01), None
patent: 10-2005-0027851 (2005-03-01), None
patent: 10-2005-0051173 (2005-06-01), None

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