Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-30
2010-12-28
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S784000, C438S758000, C438S771000, C438S783000, C438S628000, C438S618000, C438S760000, C438S643000, C438S685000, C438S686000, C438S694000, C438S696000, C438S707000, C438S763000
Reexamination Certificate
active
07858525
ABSTRACT:
A method including introducing a fluorine-free organometallic precursor in the presence of a substrate; and forming a conductive layer including a moiety of the organometallic precursor on the substrate according to an atomic layer or chemical vapor deposition process. A method including forming an opening through a dielectric layer to a contact point; introducing a fluorine-free copper film precursor and a co-reactant; and forming a copper-containing seed layer in the opening. A system including a computer including a microprocessor electrically coupled to a printed circuit board, the microprocessor including conductive interconnect structures formed from fluorine-free organometallic precursor.
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Dominguez Juan E.
Han Joseph H.
Hendrix Bryan C.
Lavoie Adrien R.
Plombon John J.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Singal Ankush K
Toledo Fernando L
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