Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-11-19
2010-10-19
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S347000, C257S365000
Reexamination Certificate
active
07816743
ABSTRACT:
A finFET structure includes a semiconductor fin located over a substrate. A gate electrode is located traversing the semiconductor fin. The gate electrode has a spacer layer located adjoining a sidewall thereof. The spacer layer does not cover completely a sidewall of the semiconductor fin. The gate electrode and the spacer layer may be formed using a vapor deposition method that provides for selective deposition upon a sidewall of a mandrel layer but not upon an adjoining surface of the substrate, so that the spacer layer does not cover completely the sidewall of the semiconductor fin. Other microelectronic structures may be fabricated using the lateral growth methodology.
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Furukawa Toshiharu
Holmes Steven J.
Horak David V.
Koburger, III Charles W.
Abate Esq. Joseph P.
International Business Machines - Corporation
Mandala Victor A
Scully , Scott, Murphy & Presser, P.C.
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