Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-09-12
2010-11-23
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S720000, C438S736000, C430S318000
Reexamination Certificate
active
07838433
ABSTRACT:
A method and apparatus for process integration in manufacture of a photomask are disclosed. In one embodiment, a cluster tool suitable for process integration in manufacture of a photomask including a vacuum transfer chamber having coupled thereto at least one hard mask deposition chamber and at least one plasma chamber configured for etching chromium. In another embodiment, a method for process integration in manufacture of a photomask includes depositing a hard mask on a substrate in a first processing chamber, depositing a resist layer on the substrate, patterning the resist layer, etching the hard mask through apertures formed in the patterned resist layer in a second chamber; and etching a chromium layer through apertures formed in the hard mask in a third chamber.
REFERENCES:
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4585516 (1986-04-01), Corn et al.
patent: 5273610 (1993-12-01), Thomas, III et al.
patent: 5472564 (1995-12-01), Nakamura et al.
patent: 5512130 (1996-04-01), Barna et al.
patent: 5556501 (1996-09-01), Collins et al.
patent: 5689215 (1997-11-01), Richardson et al.
patent: 5889252 (1999-03-01), Williams et al.
patent: 5899252 (1999-05-01), Pozzo
patent: 5925494 (1999-07-01), Horn
patent: 6043167 (2000-03-01), Lee et al.
patent: 6060132 (2000-05-01), Lee
patent: 6089181 (2000-07-01), Suemasa et al.
patent: 6171764 (2001-01-01), Ku et al.
patent: 6184151 (2001-02-01), Adair et al.
patent: 6228760 (2001-05-01), Yu et al.
patent: 6251217 (2001-06-01), Ye et al.
patent: 6252354 (2001-06-01), Collins et al.
patent: 6259334 (2001-07-01), Howald
patent: 6326107 (2001-12-01), Watanabe
patent: 6354240 (2002-03-01), De Ornellas et al.
patent: 6391794 (2002-05-01), Chen et al.
patent: 6451705 (2002-09-01), Trapp et al.
patent: 6500756 (2002-12-01), Bell et al.
patent: 6552297 (2003-04-01), Blonigan et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6607984 (2003-08-01), Lee et al.
patent: 6617794 (2003-09-01), Barnes et al.
patent: 6635185 (2003-10-01), Demmin et al.
patent: 6635583 (2003-10-01), Bencher et al.
patent: 6638855 (2003-10-01), Chang et al.
patent: 6642149 (2003-11-01), Suemasa et al.
patent: 6790770 (2004-09-01), Chen et al.
patent: 6864020 (2005-03-01), Taravade et al.
patent: 6873397 (2005-03-01), Yabu
patent: 6887339 (2005-05-01), Goodman et al.
patent: 7375038 (2008-05-01), Kumar
patent: 2001/0013313 (2001-08-01), Droopad et al.
patent: 2002/0012851 (2002-01-01), Coronel et al.
patent: 2002/0172766 (2002-11-01), Laxman et al.
patent: 2002/0177050 (2002-11-01), Tanaka
patent: 2002/0197509 (2002-12-01), Carcia et al.
patent: 2003/0008069 (2003-01-01), Nemani et al.
patent: 2003/0077910 (2003-04-01), Westerman et al.
patent: 2003/0091938 (2003-05-01), Fairbairn et al.
patent: 2003/0173333 (2003-09-01), Wang et al.
patent: 2003/0180631 (2003-09-01), Shiota et al.
patent: 2003/0186137 (2003-10-01), Chan
patent: 2004/0072081 (2004-04-01), Coleman et al.
patent: 2004/0209477 (2004-10-01), Buxbaum et al.
patent: 2005/0011862 (2005-01-01), Sasaki et al.
patent: 2005/0018604 (2005-01-01), Dropps et al.
patent: 2005/0019674 (2005-01-01), Okubo et al.
patent: 2005/0078953 (2005-04-01), Fodor et al.
patent: 2005/0082007 (2005-04-01), Nguyen et al.
patent: 2005/0090118 (2005-04-01), Shannon et al.
patent: 2005/0133163 (2005-06-01), Shannon et al.
patent: 2005/0175937 (2005-08-01), Bae
patent: 2005/0181604 (2005-08-01), Sperlich et al.
patent: 2006/0166108 (2006-07-01), Chandrachood et al.
patent: 2006/0228473 (2006-10-01), Satah
patent: 2007/0026321 (2007-02-01), Kumar
patent: 2007/0119373 (2007-05-01), Kumar
patent: 2008/0050661 (2008-02-01), Kumar
patent: 2008/0131789 (2008-06-01), Kumar
patent: 2008/0280212 (2008-11-01), Kumar
patent: 10100822 (2002-07-01), None
patent: 0 553 704 (1993-01-01), None
patent: 0 840 350 (1998-05-01), None
patent: 1 215 710 (2002-06-01), None
patent: 1 612 840 (2006-01-01), None
patent: 05166915 (1993-07-01), None
patent: 05275519 (1993-10-01), None
patent: 06 243992 (1994-09-01), None
patent: 07049558 (1995-02-01), None
patent: 2001338964 (2001-12-01), None
patent: 2002351046 (2002-12-01), None
patent: 2003060008 (2003-02-01), None
patent: 2003 073836 (2003-03-01), None
patent: 2004038154 (2004-02-01), None
patent: 99 043017 (1999-08-01), None
patent: 1011135 (2000-06-01), None
patent: 03 043061 (2003-05-01), None
Bencher, et al., “Dielectric Antireflective Coatings for DUV Lithography”, Solid State Technology, Mar. 1997, 109, 111-112 and 114.
Gwyn, et al., “Extreme Utraviolet Scanning Lithography—Supports Extension of Moore's Law”, Issue 11, 8 Pgs.
Extended European Search Report dated Jul. 9, 2008 for EP Application No. 06253960.6. (APPM/010364-EP).
J. Staples, et al., “High-Efficiency Matching Network for RF-Driven Ion Sources.” Proceedings of the 2001 Particle Accelerator Conference, Chicago, IEEE 2001; pgs. 2108-2110.
“PCT International Search Report and Written Opinion for PCT/US2004/039081,Applied Materials, Inc., dated Aug. 3, 2005.”.
Yoda Takashi, et al., “High-Performance SiOF Film Fabricated Using A Dual-Frequency-Plasma Chemical Vapour Deposition System.” Japanese Journal of Applied Physics, vol. 43, No. 9A, Sep. 9, 2004, pp. 5984-5989.
Prosecution History for U.S. Appl. No. 11/192,989.
Prosecution History for U.S. Appl. No. 11/564,354.
First Chinese Office Action issued Mar. 6, 2009 in Application No. 200610127883.8.
First Chinese Office Action issued Jun. 5, 2009 in Application No. 200610104046.3.
Summary of Official Letter and Search Report dated Jun. 10, 2009 for Taiwanese Patent Application No. 95126838.
Official Letter dated Jun. 5, 2009, from Chinese Patent Office for corresponding Chinese Patent application 200610104046.3.
The First Office Action of China Application No. 200610104045.9 dated Sep. 25, 2009.
Notice of Reasons for Rejection dated Mar. 16, 2010 for Japanese Patent No. 2006-208466.
Applied Materials Inc.
Patterson & Sheridan LLP
Vinh Lan
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