Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-06
2010-02-23
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S332000, C257SE29201
Reexamination Certificate
active
07667269
ABSTRACT:
A semiconductor device includes: a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a fourth semiconductor layer in a part of the third semiconductor layer; a trench penetrating the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer; a gate insulation film on an inner wall of the trench; a gate electrode on the gate insulation film in the trench; a first electrode; and a second electrode. The trench includes a bottom with a curved surface having a curvature radius equal to or smaller than 0.5 μm.
REFERENCES:
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Office Action dated Mar. 14, 2008 in corresponding Chinese Patent Application No. 200610077712.9 (and English translation).
Ozeki Yoshihiko
Tokura Norihito
Tsuzuki Yukio
Yamamoto Kensaku
DENSO CORPORATION
Diaz José R
Parker Kenneth A
Posz Law Group , PLC
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