Trench gate type semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S330000, C257S332000, C257SE29201

Reexamination Certificate

active

07667269

ABSTRACT:
A semiconductor device includes: a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a fourth semiconductor layer in a part of the third semiconductor layer; a trench penetrating the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer; a gate insulation film on an inner wall of the trench; a gate electrode on the gate insulation film in the trench; a first electrode; and a second electrode. The trench includes a bottom with a curved surface having a curvature radius equal to or smaller than 0.5 μm.

REFERENCES:
patent: 5321289 (1994-06-01), Baba et al.
patent: 6060747 (2000-05-01), Okumura et al.
patent: 6482701 (2002-11-01), Ishikawa et al.
patent: 6661053 (2003-12-01), Willer et al.
patent: 6737705 (2004-05-01), Momota et al.
patent: 7061047 (2006-06-01), Ono et al.
patent: 7151297 (2006-12-01), Wakimoto et al.
patent: 2006/0138535 (2006-06-01), Ono et al.
Office Action dated Mar. 14, 2008 in corresponding Chinese Patent Application No. 200610077712.9 (and English translation).

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