Method of manufacturing a flash memory device

Details Method of manufacturing a flash memory device Method of manufacturing a flash memory device

2007-05-24

2010-02-09

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S433000, C438S424000, C438S425000, C438S201000, C438S257000, C438S435000, C438S721000, C257SE21548, C257S510000, C257S374000, C257S514000, C257S515000, C257S516000, C257S519000, C257SE21545, C257SE21546, C257SE21564

Reexamination Certificate

active

07659159

ABSTRACT:
In a method of fabricating a flash memory device, a semiconductor substrate includes a tunnel insulating layer and a charge storage layer formed in an active region and a trench formed in an isolation region. A first insulating layer is formed to fill a part of the trench. A second insulating layer is formed on the first insulating layer so that the trench is filled. The first and second insulating layers are removed such that the first and second insulating layers remain on sidewalls of the charge storage layer and on a part of the trench. A third insulating layer is formed on the first and second insulating layers so that a space defined by the charge storage layer is filled. The third insulating layer is removed so that a height of the third insulating layer is lowered.

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