Phase changing memory device

Details Phase changing memory device Phase changing memory device

2008-01-07

2010-12-28

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000, C365S105000, C365S052000, C365S158000, C365S171000, C365S175000, C365S072000

Reexamination Certificate

active

07859885

ABSTRACT:
A phase change memory device includes a substrate, a plurality of cell arrays stacked above the substrate and each including a matrix layout of a plurality of memory cells, each the memory cell storing therein as data a resistance value determinable by a phase change, a write circuit configured to write a pair cell constituted by two neighboring memory cells within the plurality of cell arrays in such a manner as to write one of the pair cell into a high resistance value state and write the other into a low resistance value state, and a read circuit configured to read complementary resistance value states of the pair cell as a one bit of data.

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