Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-02-13
2010-10-12
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE31125, C257SE27130, C348S294000
Reexamination Certificate
active
07812382
ABSTRACT:
An image sensing apparatus includes an image sensing region where a plurality of pixels are two-dimensionally arrayed. Each pixel includes a photoelectric conversion unit, and a semiconductor region arranged below an element isolation region having an insulation film to isolate the photoelectric conversion unit from an adjacent pixel. The semiconductor region includes a plurality of diffusion layers. The offset amount of at least one diffusion layer in the semiconductor region with respect to the normal line is larger in a pixel arranged at the peripheral portion of the image sensing region than a pixel arranged at the center of the image sensing region.
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Canon Kabushiki Kaisha
Dickey Thomas L
Fitzpatrick ,Cella, Harper & Scinto
Yushin Nikolay
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