Method of forming small pitch pattern using double spacers

Details Method of forming small pitch pattern using double spacers Method of forming small pitch pattern using double spacers

2006-04-20

2010-11-30

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S623000, C438S624000, C438S625000, C438S626000

Reexamination Certificate

active

07842601

ABSTRACT:
A method of forming a small pitch pattern using double spacers is provided. A material layer and first hard masks are used and characterized by a line pattern having a smaller line width than a separation distance between adjacent mask elements. A first spacer layer covering sidewall portions of the first hard mask and a second spacer layer are formed, and spacer-etched, thereby forming a spacer pattern-shaped second hard mask on sidewall portions of the first hard mask. A portion of the first spacer layer between the first hard mask and the second hard mask is selectively removed. The material layer is selectively etched using the first and second hard masks as etch masks, thereby forming the small pitch pattern.

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