Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2007-06-18

2010-11-09

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000

Reexamination Certificate

active

07829419

ABSTRACT:
A semiconductor device is provided with a semiconductor substrate, a plurality of active regions separated from each other by element isolation regions formed on the semiconductor substrate; gate oxide films formed on the active regions; gate electrodes formed on the gate oxide films; side wall insulation films formed on side surfaces of the gate electrodes; recessed parts formed in exposed surfaces of the active regions excluding regions that are covered by the gate electrodes and the side wall insulation films; dam insulation films provided to a periphery of the recessed parts; and silicon epitaxial layers formed within the recessed parts.

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