Method of fabricating a stressed MOSFET by bending SOI region

Details Method of fabricating a stressed MOSFET by bending SOI region Method of fabricating a stressed MOSFET by bending SOI region

2006-11-20

2010-11-09

Mai, Anh D (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S154000, C438S275000, C438S412000, C438S479000, C438S589000, C257SE21611

Reexamination Certificate

active

07829407

ABSTRACT:
A semiconductor device including semiconductor material having a bend and a trench feature formed at the bend, and a gate structure at least partially disposed in the trench feature. A method of fabricating a semiconductor structure including forming a semiconductor material with a trench feature over a layer, forming a gate structure at least partially in the trench feature, and bending the semiconductor material such that stress is induced in the semiconductor material in an inversion channel region of the gate structure.

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