Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-19
2010-06-01
Brewster, William M (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C438S622000, C438S257000, C438S258000, C438S386000, C257S003000, C257S301000, C257SE45002, C257SE21476
Reexamination Certificate
active
07727884
ABSTRACT:
A method includes forming a phase change material layer on a substrate using a deposition process that employs a process gas. The process gas includes a germanium source gas, and the germanium source gas includes at least one of the atomic groups “—N═C═O”, “—N═C═S”, “—N═C═Se”, “—N═C═Te”, “—N═C═Po” and “—C≡N”.
REFERENCES:
patent: 5403620 (1995-04-01), Kaesz et al.
patent: 5681975 (1997-10-01), Brennan et al.
patent: 6984591 (2006-01-01), Buchanan et al.
patent: 7141488 (2006-11-01), Woelk et al.
patent: 7420200 (2008-09-01), Karpov
patent: 2005/0113243 (2005-05-01), Thorn et al.
patent: 2005/0181632 (2005-08-01), Tan et al.
patent: 2006/0040485 (2006-02-01), Lee et al.
patent: 2006/0094236 (2006-05-01), Elkins et al.
patent: 1020060008027 (2006-01-01), None
patent: 1020060074236 (2006-07-01), None
patent: 1020060076262 (2006-07-01), None
patent: WO0227063 (2002-04-01), None
Bae Byoung-Jae
Cho Sung-Lae
Lee Jin-Il
Lim Ji-Eun
Park Hye-Young
Baptiste Wilner Jean
Brewster William M
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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