Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-08-20
2010-11-23
Culbert, Roberts (Department: 1716)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C216S047000
Reexamination Certificate
active
07838426
ABSTRACT:
A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed.
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Goyal Supriya
Heo Dongho
Kim Ji-soo
Sadjadi S.M. Reza
Beyer Law Group LLP
Culbert Roberts
Lam Research Corporation
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