Thin film transistor, method of manufacturing the thin film...

Details Thin film transistor, method of manufacturing the thin film... Thin film transistor, method of manufacturing the thin film...

2007-04-11

2009-12-22

Coleman, W. David (Department: 4116)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S402000, C257SE29299, C257SE21409

Reexamination Certificate

active

07635619

ABSTRACT:
A thin film transistor according to an embodiment of the present invention includes: a semiconductor layer formed on a substrate and having a first diffusion region, a channel region, and a second diffusion region; a gate electrode opposite to the semiconductor layer across a gate insulating film formed on the semiconductor layer; and a connecting conductive film formed on the semiconductor layer opposite to the gate insulating film and extending from the first diffusion region up to a predetermined position in the channel region to electrically connect between the first diffusion region and the channel region. The transistor further includes a laying conductive layer formed on the semiconductor layer opposite to the gate insulating film and electrically connected with the second diffusion region.

REFERENCES:
patent: 2005/0082539 (2005-04-01), Fujimoto et al.
patent: 60-157258 (1985-08-01), None
patent: 9-181317 (1997-07-01), None
patent: 2003-140570 (2003-05-01), None
patent: 2004-327664 (2004-11-01), None

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