CMOS image sensors for preventing optical crosstalk

Details CMOS image sensors for preventing optical crosstalk CMOS image sensors for preventing optical crosstalk

2006-03-13

2009-02-17

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S294000, C257S215000

Reexamination Certificate

active

07491990

ABSTRACT:
An integrated circuit device includes a CMOS image sensor and a MIM capacitor therein. The CMOS image sensor includes a transfer gate electrode on a semiconductor substrate and a P-N junction photodiode within the semiconductor substrate. The photodiode is located adjacent a first side of the transfer gate electrode. A floating diffusion region is also provided within the semiconductor substrate. This floating diffusion region is located adjacent a second side of the transfer gate electrode. An interlayer insulating layer is provided on the semiconductor substrate. The interlayer insulating layer extends opposite the transfer gate electrode, the P-N junction photodiode and the floating diffusion region. An optical shielding layer of a first material is provided on the interlayer insulating layer. The optical shielding layer has a single opening therein, which extends opposite the P-N junction photodiode. This single opening inhibits optical crosstalk between adjacent unit cells within the sensor. A metal-insulating-metal (MIM) capacitor is also provided on the interlayer insulating layer. The MIM capacitor has an electrode (e.g., lower electrode) formed of the first material.

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Notice to Submit Response, Korean Application No. 10-2005-0079274, Oct. 27, 2006.

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