Method for production of semiconductor device

Details Method for production of semiconductor device Method for production of semiconductor device

2006-11-03

2009-02-24

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S592000, C257SE21649

Reexamination Certificate

active

07494864

ABSTRACT:
A method for production of a semiconductor device including the steps of: forming a gate insulating film, a polysilicon film and a first insulating film on a silicon substrate; patterning the first insulating film; forming a metal film; forming a silicide layer by reacting the polysilicon film with the metal film; forming a second insulating film after removing an unreacted metal film; removing the second insulating film such that the first insulating film is exposed and the second insulating film remains on a region which is not covered with the first insulating film; forming a gate electrode having a silicide layer on the upper layer side and a polysilicon layer on the lower layer side by carrying out etching using the second insulating film as a mask after removing the first insulating film; forming a third insulating film on the side surface of the gate electrode; and forming an interlayer insulating film and forming a contact hole therein.

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